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施路平,清华大学教授,清华大学类脑计算中心主任,光盘国家工程研究中心主任,国家千人特聘教授,国际光学工程学会(SPIE)会士。研究领域包括类脑计算、智能仪器,半导体非易失性存储器、光存储、集成光电子学、自旋电子学、纳米科学与技术等。2012年入选千人计划,2013年3月全职入职清华大学,组建清华大学类脑计算研究中心,类脑计算中心是从基础理论、类脑计算系统芯片和软件系统全方位进行类脑计算研究的团队。

曾担任IEEE non Volatile Memory Technologies Symposium (2011-2016)会议联合主席;Program Committee co-chair, IEEE ICCI*CI’2016; The 9th Asia-Pacific Conference on Near-field Optics (APNFO2013) 会议联合主席;美国Optical Data Storage Topic Meeting (ODS)顾问委员会主席( 2010),大会联合主席(2009);East-West Summit on Nanophotonics and Metal Materials 2009大会联合主席。a Book Series on Solid state memories,CRC Press and Taylor & Francis 主编。

已发表近200多篇学术论文 (包括Science, Nature Photonics, Phys Rev Lett, Advance Mat, Laser & Photonics Review, Scientific Reports),拥有10多项专利或专利申请,和4章丛书,作过60多场主题和邀请报告,因其在类超晶格相变材料和器件的杰出贡献而于2004年获颁新加坡国家科技奖(当年唯一,第一获奖人)。

基本信息

姓名:施路平
院系:精密仪器系
职称:教授
办公地址:清华大学精密仪器系4308房间
办公电话:010-62771685
电子邮箱:lpshi AT tsinghua DOT edu DOT cn

教育经历

1992年: 德国科隆大学结晶学研究所博士研究生毕业并获科学博士学位
1988年: 山东大学晶体所硕士研究生毕业并获理学硕士学位
1981年: 山东大学物理系实验物理专业学士学位

工作经历
2014/9:清华大学类脑计算中心主任
2013/3:光盘国家工程研究中心主任,千人计划特聘教授,清华大学
2009 – 2011:华中科技大学客座教授
1996/8 – 2013/3:新科研数据存储研究院
期间任:
新加坡新科研,人工认知存储器实验室主任(Program manager of Artificial cognitive memory, A*Star, Singapore);
光学材料和系统实验室主任(Division Manager of Optical materials & systems division);
非易失性存储器实验室主任(Program manager of Non volatile memory program)
光学媒体实验室主任 (Program manager of optical media)
资深科学家III, II,I (Senior scientist III, II, I)
科学家(Scientist)
首席研究工程师 (Principal research engineer II,I),
高级研究工程师,(Senior research engineer)

1994/2 – 1996/7:香港城市大学光电子中心博士后研究员
1993/1 – 1993/12:德国Frauhofer 应用光学和精密仪器研究所博士后研究员
1988/8 – 1989/8:山东大学,国家晶体材料重点实验室,讲师
1981/2 – 1985/7:山东大学实验中心助理工程师

研究方向

类脑计算 (类脑计算系统,类脑计算理论,神经形态学工程及器件)
智能仪器 (智能信息存储,人工认知存储器)
半导体非易失性存储器,(相变储存器,阻变存储器,磁存储器)
光存储 (超高密度光储存系统和媒介,绿色长寿安全命存储)
光子学 (光子学器件及材料)
自旋电子学 (相变磁性材料,相变自旋电子学器件物理)
纳米科学和技术 (纳米超快测量,纳米相变,纳米器件和材料)
获得荣誉
1. 新加坡国家科技奖2004,National Technology Award 2004 for “New Superlattice-like Rewritable Phase Change Optical Media”, Singapore 2004 (年度唯一,第一获奖人)。
2. Most Impressive Paper Award – 2012 European Phase Change and Ovonics Science Symposium (E\PCOS), “Ultra-fast Phase Change for Data Storage”
3. Outstanding Paper Award – 2012 Material Research Society (MRS) Spring Meeting, “A Strategy to Achieve Sub-nanosecond Write Speeds”
4. Best Poster Award – 2011 IEEE International Non-volatile Memory Technology Symposium (IEEE NVMTS), “Novel Bipolar TaOx-based RRAM”
5. Best Paper Award – 2006 E\PCOS “Superlattice-like PCRAM”
6. Best Paper Award – 2005 IEEE NVMTS, “Study of Geometry Effect of PCRAM”

代表性论文
1. Lei Deng, Guoqi Li, Ning Deng, Dong Wang, Ziyang Zhang,Wei He, Huanglong Li, Jing Pei, Luping Shi*, “Complex Learning in Bio-plausible Memristive Networks” , Scientific Reports, 2015,5.
2. Ning Ning, Guoqi Li, Wei He, Kejie Huang, Li Pan, Kiruthika Ramanathan,  Rong Zhao, Luping Shi*, “Modeling Neuromorphic Persistent Firing Networks”, International Journal of Intelligence Science, 2015, 5, 89-101.
3. W. He, K. Huang, N. Ning, Ramanathan, G. Li, R. Zhao and L. P. Shi*, “Enabling an Integrated Rate “Enabling an Integrated Rate -temporal Learning Scheme on Memristor”, Scientific Reports, vol.4,pp.4755 ,2014.
4. Chun Chia Tan, Luping Shi, Rong Zhao, Qiang Guo, Yi Li, Yi Yang, Tow Chong Chong, Jonathan A. Malen, Wee-Liat Ong, Tuviah E. Schlesinger, and James A. Bain, “Compositionally matched nitrogen-doped Ge2Sb2Te5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory ”, Appl Phys Lett, Volume:103 ,  Issue: 13 , 133507 (2014).
5. Chun Chia Tan,   Rong Zhao,  Luping Shi,    Chong, Tow Chong “Implementation of nitrogen-doped titanium-tungsten tunable heater in phase change random access memory and its effects on device performance” Applied Physics Letters, Volume: 105 , Issue: 15 ,  153501 (2014).
6. G. Li*, N. Ning, K. Ramanathan, H. Wei, L. Pan, and L.P. Shi, “Behind the Magical Numbers: Hierarchical Chunking and the Human Working Memory Capacity”, International Journal of Neural Systems, vol. 24,  pp. 1350019,  2013.
7. D. Loke, T. H. Lee, W. J. Wang, L. P. Shi*, R. Zhao, Y. C. Yeo, T. C. Chong, and S. R. Elliott*,
“Breaking the Speed Limits of Phase-Change Memory”, Science,336, 1566 (2012) .
8. W.J. Wang, Desmond Loke, L.P. Shi*,Rong Zhao, Hongxin Yang, Lung-Tat Ng, Kian-Guan Lim, Yeo-Chia Yeo, Tow-Chong Chong, and Andrea L. Lacaita, “Enabling Universal Memory by Overcoming the Contradictory Speed and Stability Nature of Phase-Change Materials” Scientific Reports (by Nature Publication Group), 254019, (2012).
9. R. Zhao, L.P. Shi*, C.C. Tan, H.X. Yang, L.T. Law, and T.C. Chong – “Configuration effects of superlattice-like phase change material structure”, Physica Status Solidi B – applications and materials science (2012), 249, 10, 1925 (2012) (Invited Paper, special issue dedicated to Stan Ovshinsky’s 90-year anniversary)
10. J.Q.Huang, L.P.Shi, E.G.Yeo, K.J. Yi, R. Zhao; “Electrochemical Metallization Resistive Memory Devices Using  as a Solid Electrolyte” IEEE ELECTRON DEVICE LETTERS  Volume: 33   Issue: 1   Pages: 98-100  ( 2012).
11. D. Ding, K. Bai, W.D. Song, L.P.Shi*, R. Zhao, R. Ji, M. Sullivan and P. Wu, “Origin of Ferromagnetism and Design Principle in Phase-Change Magnetic Materials”, Phys Rev B, 84, 214416 (2011).
12. L.P. Shi*, K.J. Yi, K. Ramanathan, R. Zhao, N. Ning, D. Ding, and T. C. Chong, “Artificial Cognitive Memory – Changing from Density Driven to Functionality Driven”,  Applied Phys A, 102 (4), 865 (2011). (Invited paper).
13. Desmond Loke, L.P. Shi*, W.J. Wang, R. Zhao, H.X. Yang, L.T. Ng, K.G. Lim, T.C. Chong and Y.C. Yeo, “Ultrafast switching in nanoscale phase-change random access memory with superlattice-like structures”, Nanotechnology, 22 254019 (2011). (Invited paper).
14. E. K. Chua, L.P. Shi*, M. H. Li, R. Zhao, T. C. Chong, T. E. Schlesinger, and J. A. Bain, “Band alignment between GeTe and SiO2/metals for characterization of junctions in nonvolatile resistance change elements” Appl. Phys. Lett. 98, 232104 (2011);
15. W.D.Song, L.P.Shi, and T.C. Chong, “Magnetic Properties and Phase Change Features in Fe-Doped Ge-Sb-Te” JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY  Volume: 11   Issue: 3,   2648 (2011).
16. Desmond Loke, L.P. Shi*, W.J. Wang, R. Zhao, Lung.T. Ng,K.G. Lim, H.X. Yang, T.C. Chong, and Y.C. Yeo “Superlatticelike dielectric as a thermal insulator for phase-change random access memory” Applied Physics Letters, 97, 243508(2010).
17. E. K. Chua, L. P. Shi*, R. Zhao, K. G. Lim, T. C. Chong, T. E. Schlesinger, and J. A. Bain, “Low resistance, high dynamic range reconfigurable phase change switch for radio frequency applications”, Applied Physics Letters, 97, 183506  (2010).
18. T.C. Chong, M.H. Hong, L.P. Shi, “Laser precision engineering: from icrofabrication to nanoprocessing”, Laser & Photonics Reviews, Vol 4#1, 123 (2010). (Invited review paper).
19. E.G. Yeo, L.P. Shi*, R. Zhao, K.G. Lim, T.C. Chong and I.Adesida – “Parasitic capacitance effect on programming performance of PCRAM devices”, Applied Physics Letters, 96, 043506 (2010)
20. E.G. Yeo, R. Zhao, L.P. Shi*, K.G. Lim, T.C. Chong and I. Adesida. – “Transient phase change effect during the crystallization process in phase change memory devices”, Applied Physics Letters, 94, 243504, (2009)
21. H.X. Yang, T.C. Chong, R. Zhao, H.K. Lee, J.M. Li, K.G. Lim, and L.P. Shi*. – “GeTe/Sb7Te3 superlatticelike structure for lateral phase change memory”, Applied Physics Letters, 94, 203110, (2009)
22. Kiruthika Ramanathan, L.P. Shi, Jianming Li, Kian Guan Lim, Ming Hui Li, Zhi Ping Ang, Tow Chong Chong “A Neural Network Model for a Hierarchical Spatio-temporal Memory”; ADVANCES IN NEURO-INFORMATION PROCESSING, Volume: 5506; p428-435  (2009).
23. W.D. Song, L.P. Shi*, X. S. Miao, and T. C. Chong – “Synthesis and Characteristics of Phase Change Magnetic Material”, Advanced Materials, Vol. 20, No. 12, pp.2394-2397 (2008)
24. T. C. Chong, L. P. Shi*, X. Q. Wei, R. Zhao, H. K. Lee, A. Y. Du and P. Yang – “Crystalline Amorphous Superlattice”, Physical Review Letters, 100, 136101 (2008).
25. H. F. Wang, L. P. Shi, B. S. Luk’yanchuk, C. Sheppard, and T. C. Chong, “Creation of a needle of longitudinally polarized light in vacuum using binary optics”, Nature Photonics, Vol. 2, No. 8, pp. 501-505, (2008).
26. W. J. Wang, L. P. Shi*, R. Zhao, K. G. Lim, H. K. Lee, T. C. Chong, and Y. H. Wu. – “Fast phase transitions induced by picosecond electrical pulses on phase change memory cells”, Applied Physics Letters, Vol. 93, pp. 043121,  (2008)
27. M. L. Lee, X. S. Miao, L. H. Ting, L. P. Shi*, “Ultra-fast crystallization and thermal stability of In-Ge doped eutectic Sb70Te30 phase change material”, J. Appl. Phys vol. 103 Issue 4, 043501 (2008)
28. W.D. Song, L. P. Shi*, X. S. Miao and T. C. Chong – “Phase change behaviors of Sn-doped Ge-Sb-Te material”, Applied Physics Letters, Vol. 90, 091904, (2007).
29. L.P. Shi* and T.C. Chong – “Nano phase change for data storage application”, Journal of Nanoscience and Nanotechnology Vol.7, No.1, 65 (2007) (invited review paper)


• 2017年2月19日编辑

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